The co-design of IPD high-selectivity diplexer and dual-band filter chips based on lumped element single-band filter

被引:0
作者
Liu, Yuxin [1 ]
Wu, Yongle [1 ]
Zhen, Shuchen [1 ]
Yang, Yuhao [1 ]
Wang, Weimin [2 ]
Yang, Qinghua [2 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Integrated Circuits, POB 282, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, Sch Elect Engn, POB 282, Beijing 100876, Peoples R China
关键词
Integrated passive device (IPD); Lumped elements; Dual -band filter; Diplexer; Miniaturization;
D O I
10.1016/j.aeue.2024.155369
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a dual-band bandpass filter (D-BPF) and a diplexer are proposed. Their core structures are both a lumped element single-band bandpass filter (S-BPF) with dual transmission poles (TPs) and dual transmission zeros (TZs). For the D-BPF, based on this S-BPF, single-band impedance matching networks (S-IMNs) are used to form the second/third passbands. Two S-BPFs with different first reactance elements are used for the diplexer to achieve good isolation without T-junction. Finally, the D-BPF and the diplexer with center frequencies of 2.26/ 4.75 GHz and 2.3/5.75 GHz are fabricated by thin-film integrated passive device (IPD) technology. The physical size of the D-BPF chip is only 1.5 x 1.1 mm2, and the diplexer chip is 2.3 x 1.5 mm2. Measured results show they both have the advantages of good insertion loss, excellent impedance matching, high roll-off, and broad stopband rejection. The isolation of the diplexer is greater than 23 dB from 0 to 10 GHz.
引用
收藏
页数:9
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