Laser damage and post oxidation repair performance of n-TOPCon solar cells with laser assisted doping boron selective emitter

Boron laser -assisted doped selective emitter (LDSE) is a research hotspot in the mass production of N -type tunnel oxide passivated contact (TOPCon) silicon solar cells. Consequently, it is critical to investigate the damage and repair of laser -assisted doped selective emitter. Through simulation, a surface temperature of silicon rises to over 1414 degrees C during the laser -assisted doping process, which causes silicon to melt and recrystallize more quickly, and increases the solid solubility of B atoms. Meanwhile, the surface pyramid structure was partially destroyed or even collapsed. The results showed that the peak intensity of (211) crystal planes decreased while the peak intensity of (400), (311), and (220) crystal planes increased. This led to an increase in surface defects and suspension bonds, resulting in an increase in J 0,passivated up to 246.3 fA/cm 2 . The laser -induced damage can be successfully repaired by the post -oxidation process, reducing J 0,passivated to 45.07 fA/cm 2 . The Quokka simulation indicates that a laser pulse fluence of 2.78 J/cm 2 can increase the efficiency of the LDSE cell by 0.31 %. It does not necessarily lead to the greater efficiency gains with higher laser pulse fluence owing to the increase in surface damage. Exploiting the laser assisted doping method with a minimal surface damage, a wide process window and low cost will be the next major challenge.