First-principles study of defects and doping limits in CaO

被引:0
|
作者
Yuan, Zhenkun [1 ]
Hautier, Geoffroy [1 ]
机构
[1] Dartmouth Coll, Thayer Sch Engn, Hanover, NH 03755 USA
关键词
WIDE-BANDGAP SEMICONDUCTORS; TOTAL-ENERGY CALCULATIONS; ELECTRICAL-CONDUCTIVITY; POINT-DEFECTS; HYDROGEN; CALCIUM; OXIDES; MGO; TAILOR; FILMS;
D O I
10.1063/5.0211707
中图分类号
O59 [应用物理学];
学科分类号
摘要
Calcium oxide (CaO) is a promising host for quantum defects because of its ultrawide bandgap and potential for long spin coherence times. Using hybrid functional calculations, we investigate the intrinsic point defects and how they limit Fermi-level positions and doping in CaO. We find calcium and oxygen vacancies to be the most common intrinsic defects, acting as compensating acceptors and donors, respectively. Oxygen interstitials are also prevailing under O-rich conditions and act as compensating donors. Due to compensation by these defects, O-poor conditions are required to dope CaO n-type, while O-rich conditions are required for p-type doping. We find that, at room temperature, intrinsic CaO can only achieve Fermi-level positions between 1.76 eV above the valence-band maximum (VBM) and 1.73 eV below the conduction-band minimum (CBM). If suitable shallow dopants are found, the allowed range of Fermi levels would increase to between VBM + 0.53 eV and CBM - 0.27 eV and is set by the compensating intrinsic defects. Additionally, we study hydrogen impurities, and show that hydrogen will not only limit p-type doping but can also act as shallow donor when substituting oxygen ( H-O defects).
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页数:6
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