Facile synthesis of Cu-Sn nanoparticle film and its bonding mechanism for power electronic packaging

被引:2
作者
Hu, Huan [1 ]
Jia, Qiang [1 ]
Wang, Yishu [1 ]
Zhou, Bolong [1 ]
Zhang, Hongqiang [2 ]
Zhang, Mingan [1 ]
Ma, Limin [1 ]
Zou, Guisheng [3 ]
Guo, Fu [1 ,4 ]
机构
[1] Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
[2] Beihang Univ, Sch Mech Engn & Automat, Beijing 100191, Peoples R China
[3] Tsinghua Univ, Dept Mech Engn, State Key Lab Tribol, Beijing 100084, Peoples R China
[4] Beijing Informat Sci & Technol Univ, Sch Mech Elect Engn, Beijing 100192, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
Cu-Sn intermetallic compounds; Power electronic packaging; Pulsed laser deposition; Bonding mechanism; SOLDER JOINTS; INTERMETALLIC COMPOUND; STRENGTH;
D O I
10.1016/j.jmatprotec.2024.118438
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Cu-Sn full intermetallic compound is a promising high -temperature electronic packaging material, while its preparation is usually time-consuming. In this work, a novel dual -beam laser co -deposition method was proposed to prepare Cu-Sn nanoparticle film for power electronic packaging with high bonding efficiency. Various Cu-Sn contents were prepared to reveal the bonding mechanism of the full intermetallic compound structure. The results show that joints with a Cu content ranging from 20 wt% to 80 wt% could form full intermetallic compounds within 2 min with the shear strength reaching 120 MPa. Specifically, Cu6Sn5, 'island -like' Cu3Sn, and sintered Cu generated successively in the bondline center with the increasing Cu content. All failures occurred within the bondline indicating a higher interface bonding quality, while the 'island -like' Cu3Sn enhanced the shear strength. This die attach process is compatible with current commercial SiC die attach process with lower material cost as well as high efficiency, enabling the Cu-Sn nanoparticle film to be a promising material for highreliability power electronic packaging.
引用
收藏
页数:10
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