Nanoscale, surface-confined phase separation by electron beam induced oxidation

被引：1

作者：

Barth, Sven ^{[1
,2
]}

Porrati, Fabrizio ^{[1
]}

Knez, Daniel ^{[3
]}

Jungwirth, Felix ^{[1
,2
]}

Jochmann, Nicolas P. ^{[1
,2
]}

Huth, Michael ^{[1
]}

Winkler, Robert ^{[4
]}

Plank, Harald ^{[3
,4
]}

Gracia, Isabel ^{[5
]}

Cane, Carles ^{[5
]}

机构：

[1] Goethe Univ Frankfurt, Inst Phys, Max Von Laue Str 1, D-60323 Frankfurt, Germany

[2] Goethe Univ Frankfurt, Inst Inorgan & Analyt Chem, Max Von Laue Str 7, D-60438 Frankfurt, Germany

[3] Graz Univ Technol, Inst Electron Microscopy & Nanoanal, Steyrergasse 17, A-8010 Graz, Austria

[4] Graz Univ Technol, Inst Electron Microscopy, Christian Doppler Lab Direct Write Fabricat 3D Nan, Steyrergasse 17, A-8010 Graz, Austria

[5] CSIC, Inst Microelect Barcelona IMB, Ctr Nacl Microelect CNM, Barcelona 08193, Spain

来源：

NANOSCALE | 2024年 / 16卷 / 31期

关键词：

INDUCED DEPOSITION; PRECURSORS; CHEMISTRY; MECHANISM; DYNAMICS; GROWTH; COBALT;

D O I：

10.1039/d4nr01650e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electron-assisted oxidation of Co-Si-based focused electron beam induced deposition (FEBID) materials is shown to form a 2-4 nm metal oxide surface layer on top of an electrically insulating silicon oxide layer less than 10 nm thick. Differences between thermal and electron-induced oxidation on the resulting microstructure are illustrated. Electron-assisted oxidation of Co-Si-based focused electron beam induced deposition (FEBID) materials is shown to form an oxide bilayer with a total thickness of less than 15 nm by phase separation.

引用

页码：14722 / 14729

页数：8

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