The First Investigation of Switching Lifetime on Parallel-connected GaN power devices

被引：0
|
作者：
Huang, Yifei [1 ,2 ]
Jiang, Qimeng [1 ,2 ]
Huang, Sen [1 ,2 ]
Dai, Xinyue [1 ,2 ]
Wang, Xinhua [1 ,2 ]
Liu, Xinyu [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年
基金：
中国国家自然科学基金;
关键词：
GaN; Parallel; ON-resistance degradation; reliability; lifetime;
D O I：
10.1109/IRPS48228.2024.10529463
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaN power device is increasingly becoming a solution to obtain high efficiency and high power density. Stability and reliability issues of dynamic ON-resistance for Parallel-connected GaN power devices are investigated for the first time. The "550-V-stress/100-V-monitor" scheme is used to identify the irreversible dynamic RON degradation. The time-resolved degradation for lifetime evaluation is conducted, where the parallel-connected devices exhibit a longer operation lifetime as compared with a single device configuration, due to the self-adjustment of the discharging current during the hard switching turn-ON transient.
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页数：6
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