Transition Metal-Based Dimeric Metallosurfactants: From Organic-Inorganic Hybrid Structures and Low-Dimensional Magnets to Metallomicelles

被引:2
|
作者
Rubcic, Mirta [1 ]
Herak, Mirta [2 ]
Zagorec, Leona [3 ]
Domazet Jurasin, Darija [4 ]
机构
[1] Univ Zagreb, Fac Sci, Dept Chem, HR-10000 Zagreb, Croatia
[2] Inst Phys, Dept Res Mat Extreme Condit, HR-10000 Zagreb, Croatia
[3] Univ Zagreb, Fac Chem Engn & Technol, HR-10000 Zagreb, Croatia
[4] Rudjer Boskovic Inst, Div Phys Chem, HR-10000 Zagreb, Croatia
关键词
OLIGOMERIC SURFACTANTS; BEHAVIOR; AGGREGATION;
D O I
10.1021/acs.inorgchem.4c01550
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The dimeric (gemini) as well as metallosurfactants exhibit enhanced physicochemical properties compared with conventional surfactants. By uniting the benefits of both, a series of novel dimeric metallosurfactants of the type (12-2-12)[MBr4] (M = Co, Ni, Cu and Zn) was successfully prepared by the reaction of the dimeric surfactant bis(N,N-dimethyl-N-dodecyl)ethylene-1,2-diammonium dibromide, 12-2-12, and the MBr2 salt. Structures and magnetic properties of the materials were studied comprehensively in the solid state, while their micellization was explored in solution. The obtained results unveil that the incorporation and the choice of transition metal more significantly influence surfactants' structures ((12-2-12)(2+) cations adopt V-, U-, or trans-conformations) and the magnetic features (metal ions form 1D or 2D magnetic lattice) than their solution properties. However, all synthesized metallosurfactants display improved self-assembly properties compared with the metal-free precursor. The investigated systems represent a fruitful platform for the development of multifunctional materials as they are simple to produce, can be obtained in high yields, and show advanced properties both in solution and in the solid state. Notably, this work unveils a simple approach to the design and synthesis of novel low-dimensional magnetic systems of great potential for future spintronic and optoelectronic devices.
引用
收藏
页码:12218 / 12230
页数:13
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