High-temperature oxidation resistance behavior and mechanism of HfSiO 4-modified C/SiC composites

To enhance the oxidation resistance of C/SiC composites, HfSiO 4 was introduced into C/SiC composites to modify the matrix utilizing two cyclic alternating preparation modes, thereby yielding the C/SiC-HfSiO 4 composites with a composite matrix. Using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), energy -dispersive spectrometer (EDS), and thermogravimetric-differential thermal analysis (TG-DTA), a comprehensive investigation was conducted into the oxidation behavior and mechanism of the prepared composites. Results reveal that the C/SiC-HfSiO 4 composites prepared using cyclic alternating preparation modes display the reduced oxidation mass loss and enhanced retention of flexural strength, despite of having higher porosity. In short, the introducing of HfSiO 4 can effectively improve the oxidation resistance of C/SiC composites. The effects of the matrix particle refinement and the synergy between the HfSiO 4 and SiO 2 jointly lead to the enhanced oxidation resistance.