Crystal growth and power device applications of β-Ga2O3

被引：0

作者：

Sasaki, K. ^{[1
]}

Kuramata, A. ^{[1
]}

机构：

[1] Novel Crystal Technol, 2-3-1 Hirosedai, Sayama, Saitama 3501328, Japan

来源：

OXIDE-BASED MATERIALS AND DEVICES XV | 2024年 / 12887卷

关键词：

Ga2O3; gallium oxide; crystal growth; power device; HVPE; EFG; SBD; FET;

D O I：

10.1117/12.3013494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Development of beta-Ga2O3 power devices has been accelerating over the past few years. In particular, 4-inch devicequality beta-Ga2O3 epi wafers have become commercially available, and low-loss trench MOS-type SBDs, and normally-off MOSFETs have been demonstrated. In this paper, we will explain recent progress in crystal growth techniques for beta-Ga2O3 and power devices based on this material.

引用

页数：6

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