Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process

被引：1
作者：
Kuwahara, Kotaro [1 ]
Kitawaki, Takeaki [1 ]
Hara, Masahiro [1 ]
Kaneko, Mitsuaki [1 ]
Kimoto, Tsunenobu [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo, Kyoto 6158510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 05期
基金：
日本学术振兴会;
关键词：
SiC; ohmic contacts; schottky barrier diodes; activation ratio; tunneling current; Al implantation; p-type SiC; ELECTRICAL ACTIVATION; TEMPERATURE; ALUMINUM; SEMICONDUCTOR; CIRCUITS; DEVICES;
D O I：
10.35848/1347-4065/ad43cf
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current-voltage (I-V) characteristics and contact resistivity (rho(c)) of Ni electrodes formed on heavily Al+-implanted p-type SiC without an alloying process were investigated. A nearly ohmic I-V curve with a rho(c) of 9.3 x 10(-2) Omega cm(2) was demonstrated for non-alloyed Ni electrodes by very high-dose Al+ implantation (3.1 x 10(20) cm(-3)). The dependence of the experimental rho(c) on net acceptor density (N-A) can be described by a change in the contribution of direct tunneling and trap-assisted tunneling.
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页数：5
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