The La2Pd3(Si, Ge)5 complete solid solution: Crystal structure, chemical bonding, and volume chemistry

The La2Pd3Si5 intermetallic and the La2Pd3(SixGe1-x)5 solid solution were targeted for structural and computational investigations. The ternary compound and quaternary alloys with varying silicon contents (x = 0.25, 0.50, 0.70, 0.75) were prepared by arc melting and turned out to crystalize with the oI40-U2Co3Si5 (Ibam, N. 72) type structure based on powder X-ray diffraction data. The crystal structure of La2Pd3Si5 was additionally solved through X-ray diffraction on single crystal grown by recrystallization in Sn flux. Chemical bonding investigations based on QTAIM effective charges and DOS/(I)COHP analysis indicate the formation of heteropolar interactions between Si and the surrounding La/Pd metals, and between La and Pd. Covalently bonded zigzag chains of Si are also formed and considered to be the main responsible for the higher melting point of La2Pd3Si5, measured by DSC, with respect to that of La2Pd3Ge5. The formation of a complete solid solution between La2Pd3Si5 and La2Pd3Ge5 was confirmed and refined unit cell parameters and volumes change linearly with composition, displaying a Vegard trend. The calculation of atomic volumes on a quantum chemical basis (QTAIM) provides detailed insights into the volume chemistry of La2Pd3(SixGe1-x)5. Through this analysis La is found to be responsible, together with the gradual substitution of Ge with Si, for the volume contraction.