Introducing Internal Host Component to Thermally Activated Delayed Fluorescence Emitter for Efficient NIR Nondoped Organic Light-Emitting Diodes

被引:2
作者
Hao, Xiao-Yao [1 ]
Wang, Hui [1 ]
Zhang, Xi [1 ]
Yu, Jia [1 ]
Wang, Kai [1 ,2 ]
Zhang, Xiao-Hong [1 ,3 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[2] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[3] Soochow Univ, Jiangsu Key Lab Adv Negat Carbon Technol, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
organic light-emitting diodes; thermally activated delayedfluorescence; near-infrared (NIR); nondoped devices; internal host; OLEDS;
D O I
10.1021/acsami.4c01637
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Developing thermally activated delayed fluorescence (TADF) near-infrared (NIR) organic light-emitting diodes (OLEDs) based on nondoped emitting layers is intriguing yet challenging, limited by low exciton utilization and notorious concentration quenching. Herein, a facile strategy is proposed to address this issue by incorporating an internal host component onto a traditional donor (D)-acceptor (A)-type red TADF molecule. A proof-of-concept emitter with an internal host is accordingly developed as well as a control one without an internal host. In the case of their monomer states, both emitters exhibit similar emission spectra due to their identical D-A pairs. However, under nondoped conditions, significant improvement in exciton utilization and quenching-resistant features are observed for the molecule with the internal host. The corresponding nondoped OLED yielded a maximum external quantum efficiency of 2.4%, with NIR emission peaking at 765 nm, which was a nearly 10-fold improvement relative to the efficiency based on the control molecule without an internal host. To the best of our knowledge, this result is on par with those of state-of-the art nondoped NIR TADF OLEDs in a similar emission region. These results offer a feasible pathway for the design and development of high-efficiency NIR nondoped OLEDs.
引用
收藏
页码:28949 / 28957
页数:9
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