influence of etching sequence on morphology in deep silicon etching

被引：0

作者：

Ma, Yiming ^{[1
]}

Yang, Guang ^{[1
]}

Xu, Litian ^{[1
]}

Jiang, Zhongwei ^{[1
]}

Wang, Jing ^{[1
]}

Wang, Donghan ^{[1
]}

Li, Dong ^{[1
]}

机构：

[1] Beijing NAURA Microelect Equipment Co Ltd, Beijing, Peoples R China

来源：

CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年

关键词：

silicon; etch; side wall; selectivity; morphology; CL-2;

D O I：

10.1109/CSTIC61820.2024.10531958

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The cycli etching process is mainly used for silicon etching, which can achieve a large aepect ratio and selectivity ratio. The article uses CL2/Ar ase the main etching gas, O2 as the passivation gas, and CF4/CHF3 as the gas for opening the bottom of passivation layer. The result show that the silicon sidewall angle >= 96 degrees, the silicon sidewall is continuous, and there is no obvious fan-shaped roughness.

引用

页数：2

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