Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors

被引：0
|
作者：
De, Sourav [1 ]
Cho, Chen-Yi [1 ]
Ali, Tarek [2 ]
Banerjee, Writam [2 ]
Ramirez, Lucia Perez [3 ]
Barrett, Nick [3 ]
Majumder, Sayani [4 ]
Hou, Tuo-Hung [1 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Hsinchu, Taiwan
[2] GlobalFoundries Dresden Module One, D-01109 Dresden, Germany
[3] Univ Paris Saclay, CNRS, SPEC, CEA,CEA Saclay, Gif Sur Yvette, France
[4] Tampere Univ, Informat Technol & Commun Sci, Tampere, Finland
来源：
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年
关键词：
Hafnium Oxide; FeFET; FeRAM; FeFinFET; Advanced FeFETs; SCM; CIM;
D O I：
10.1109/EDTM58488.2024.10511366
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The discovery of ferroelectricity in hafnium oxide (HfO2) has proved to be a game changer in the potential applications of ferroelectric non-volatile memories (NVM) in mainstream electronics. This paper discusses the present status, potential, and challenges facing ferroelectric field effect transistor (FeFET) memories and sketches promising technology evolution for the next decade and the most exciting applications.
引用
收藏
页码：511 / 513
页数：3
相关论文
共 50 条
  • [41] Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
    Martin, Dominik
    Yurchuk, Ekaterina
    Mueller, Stefan
    Mueller, Johannes
    Paul, Jan
    Sundquist, Jonas
    Slesazeck, Stefan
    Schloesser, Till
    van Bentum, Ralf
    Trentzsch, Martin
    Schroeder, Uwe
    Mikolajick, Thomas
    SOLID-STATE ELECTRONICS, 2013, 88 : 65 - 68
  • [42] First-principles predictions of HfO2-based ferroelectric superlattices
    Mukherjee, Binayak
    Fedorova, Natalya S.
    iniguez-Gonzalez, Jorge
    NPJ COMPUTATIONAL MATERIALS, 2024, 10 (01)
  • [43] HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial
    蒋然
    吴正冉
    韩祖银
    Hyung-Suk Jung
    Chinese Physics B, 2016, 25 (10) : 303 - 307
  • [44] HfO2-based ferroelectric synaptic devices: challenges and engineering solutions
    Kwon, Taegyu
    Choi, Hyeong Seok
    Lee, Dong Hyun
    Han, Dong Hee
    Cho, Yong Hyeon
    Jeon, Intak
    Jung, Chang Hwa
    Lim, Hanjin
    Moon, Taehwan
    Park, Min Hyuk
    CHEMICAL COMMUNICATIONS, 2025, 61 (15) : 3061 - 3080
  • [45] Root cause of degradation in novel HfO2-based Ferroelectric Memories
    Pesic, Milan
    Fengler, Franz P. G.
    Slesazeck, Stefan
    Schroeder, Uwe
    Mikolajick, Thomas
    Larcher, Luca
    Padovani, Andrea
    2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
  • [46] Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
    Mulaosmanovic, Halid
    Mueller, Franz
    Lederer, Maximilian
    Ali, Tarek
    Hoffmann, Raik
    Seidel, Konrad
    Zhou, Haidi
    Ocker, Johannes
    Mueller, Stefan
    Duenkel, Stefan
    Kleimaier, Dominik
    Mueller, Johannes
    Trentzsch, Martin
    Beyer, Sven
    Breyer, Evelyn T.
    Mikolajick, Thomas
    Slesazeck, Stefan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3466 - 3471
  • [47] Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature
    Hur, Jae
    Park, Chinsung
    Choe, Gihun
    Ravindran, Prasanna Venkatesan
    Khan, Asif Islam
    Yu, Shimeng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) : 5948 - 5951
  • [48] Retention Model and Express Retention Test of Ferroelectric HfO2-Based
    Mikheev, Vitalii
    Kondratyuk, Ekaterina
    Chouprik, Anastasia
    PHYSICAL REVIEW APPLIED, 2022, 18 (06)
  • [49] HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial
    Jiang, Ran
    Wu, Zheng-Ran
    Han, Zu-Yin
    Jung, Hyung-Suk
    CHINESE PHYSICS B, 2016, 25 (10)
  • [50] One Nanometer HfO2-Based Ferroelectric Tunnel Junctions on Silicon
    Cheema, Suraj S.
    Shanker, Nirmaan
    Hsu, Cheng-Hsiang
    Datar, Adhiraj
    Bae, Jongho
    Kwon, Daewoong
    Salahuddin, Sayeef
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (06)
12345