Machine Learning-Assisted Precision Manufacturing of Atom Qubits in Silicon

被引:1
|
作者
Tranter, Aaron D. [1 ]
Kranz, Ludwik [2 ,3 ]
Sutherland, Sam [2 ,3 ]
Keizer, Joris G. [2 ,3 ]
Gorman, Samuel K. [2 ,3 ]
Buchler, Benjamin C. [1 ]
Simmons, Michelle Y. [2 ,3 ]
机构
[1] Australian Natl Univ, Ctr Excellence Quantum Computat & Commun Technol, Res Sch Phys, Dept Quantum Sci & Technol, Acton 2601, Australia
[2] UNSW Sydney, Sch Phys, Ctr Excellence Quantum Computat & Commun Technol, Kensington, NSW 2052, Australia
[3] UNSW Sydney, Silicon Quantum Comp Pty Ltd, Kensington, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
machine learning; silicon; phosphorus; STM lithography; quantum dots; PHOSPHINE DISSOCIATION; NEURAL-NETWORKS;
D O I
10.1021/acsnano.4c00080
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Donor-based qubits in silicon, manufactured using scanning tunneling microscope (STM) lithography, provide a promising route to realizing full-scale quantum computing architectures. This is due to the precision of donor placement, long coherence times, and scalability of the silicon material platform. The properties of multiatom quantum dot qubits, however, depend on the exact number and location of the donor atoms within the quantum dots. In this work, we develop machine learning techniques that allow accurate and real-time prediction of the donor number at the qubit site during STM patterning. Machine learning image recognition is used to determine the probability distribution of donor numbers at the qubit site directly from STM images during device manufacturing. Models in excess of 90% accuracy are found to be consistently achieved by mitigating overfitting through reduced model complexity, image preprocessing, data augmentation, and examination of the intermediate layers of the convolutional neural networks. The results presented in this paper constitute an important milestone in automating the manufacture of atom-based qubits for computation and sensing applications.
引用
收藏
页码:19489 / 19497
页数:9
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