In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells

被引：6

作者：

Pious, Johnpaul K. ^{[1
]}

Lai, Huagui ^{[1
]}

Hu, Juntao ^{[2
]}

Luo, Deying ^{[3
]}

Gilshtein, Evgeniia ^{[1
]}

Siegrist, Severin ^{[1
]}

Kothandaraman, Radha K. ^{[1
]}

Lu, Zheng-Hong ^{[2
,3
]}

Wolff, Christian M. ^{[4
]}

Tiwari, Ayodhya N. ^{[1
]}

Fu, Fan ^{[1
]}

机构：

[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland

[2] Yunnan Univ, Ctr Optoelect Engn Res, Dept Phys, Kunming 650091, Yunnan, Peoples R China

[3] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

[4] Ecole Polytech Fed Lausanne EPFL, Inst Elect & Microengn IEM, Photovolta & Thin Film Elect Lab, CH-2002 Neuchatel, Switzerland

来源：

ACS APPLIED MATERIALS & INTERFACES | 2024年 / 16卷 / 30期

关键词：

low bandgap Pb-Sn perovskites; buried interface; 2-fluoro benzylammonium iodide additive; perovskitesolar cell upscaling; blade-coating;

D O I：

10.1021/acsami.4c07083

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (W-F) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA(0.6)MA(0.4)Pb(0.4)Sn(0.6)I(3))/HTL bottom interface. The W-F of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5% efficiency and an impressive V-OC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA(0.6)MA(0.4)Pb(0.4)Sn(0.6)I(3) PSCs with 18.3% efficiency and an exceptionally high V-OC of 0.845 V.

引用

页码：39399 / 39407

页数：9

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