High quantum efficiency broadband near-infrared LaTiSbO 6: Cr 3+phosphors

Cr 3+ doped phosphor shows great potential for near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs). However, low quantum efficiency have severely restricted NIR pc -LED performance. Herein, a novel Cr 3+ -doped broadband NIR LaTiSbO 6 (LTS) phosphor was developed. The LTS:0.6%Cr 3+ phosphor achieves an outstanding internal quantum efficiency of 91.82 %. The photoluminecence spectrum shows a broad emission of 650 - 1300 nm centered at 832 nm with a large full width at half maximum (FWHM) of 183 nm and an R -line emission of 710 nm. Meanwhile, the optimal LTS:0.6%Cr 3+ phosphor maintains 64.72 % of its initial intensity at 373 K. A prototype NIR pc -LED was fabricated with LTS:Cr 3+ to evaluate its potential practical application, which reveals an NIR output power of 202 mW at 100 mA and 680 mW at 300 mA, photoelectric efficiencies of 3.21 % at 100 mA and 1.85 % at 300 mA. The results demonstrate that the high -performance LTS:Cr 3+ phosphors have great potential for applications in broadband NIR pc-LEDs.