Non-equilibrium Green's function analysis of charge plasma-based source-drain electrode P-type MoTe2 MOSFET for high sensitivity hydrogen sensing

The paper presents a novel P -type molybdenum ditelluride (MoTe 2 ) Metal -OxideSemiconductor Field -Effect Transistor (MOSFET) designed for high sensitivity hydrogen sensing applications. Through the utilization of palladium at the source -drain charge plasma electrode, P + regions at both ends are generated, obviating the necessity for low -dimensional MoTe 2 doping. Simultaneously, the inclusion of palladium on both regions act as the sensing area, resulting in notably heightened sensitivity. The study employs Non -Equilibrium Green ' s Function (NEGF) formalism to investigate the carrier transport properties of the device. The results provide valuable insights into less explored area of p -type MOSFET performance as Hydrogen(H 2 ) gas sensor and its potential.