Electric double layer effect in the vicinity of solid electrolyte/diamond interfaces and the application to neuromorphic computing

被引：2

作者：

Tsuchiya, Takashi ^{[1
]}

Takayanagi, Makoto ^{[1
,2
]}

Nishioka, Daiki ^{[1
,2
,3
]}

Namiki, Wataru ^{[1
]}

Terabe, Kazuya ^{[1
]}

机构：

[1] Natl Inst Mat Sci NIMS, Res Ctr Mat Nanoarchitecton MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] Tokyo Univ Sci, Fac Sci, Dept Appl Phys, 6-3-1 Niijuku, Katsushika, Tokyo 1258585, Japan

[3] Natl Inst Mat Sci NIMS, Int Ctr Young Scientists ICYS, Sengen 1-2-1, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF SOLID STATE ELECTROCHEMISTRY | 2024年 / 28卷 / 12期

基金：

日本学术振兴会;

关键词：

THIN-FILM; RESERVOIR; CONDUCTION; SURFACE; CHAOS; DEVICES; LICOO2; EDGE;

D O I：

10.1007/s10008-024-05937-z

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electric double layer effect in solid electrochemical systems is a key topic in energy storage applications. In this review, we outline recent investigations on the electric double layer effect of solid electrolyte interfaces by utilizing a semiconducting diamond surface as a probe of electrical charges at the solid/solid interfaces. Hall measurements with various solid electrolyte-based transistors evidenced that the electric double-layer effect strongly depends on the properties of the electrolyte and the very thin region from the interface. The unveiled features of the electric double layer at solid electrolyte interfaces are quantitatively discussed from the viewpoint of charge density and charging-discharging rate. Furthermore, applications of the unique switching response of the electric double layer transistors to neuromorphic computing are also demonstrated.

引用

页码：4367 / 4376

页数：10

共 60 条

[1] Performance of reservoir computing in a random network of single-walled carbon nanotubes complexed with polyoxometalate [J].