Reliability study of Through Glass Vias under high current density

Through glass vias (TGVs) interconnection technology based on glass interposer shows a great application prospect in RF devices, MEMS packaging and other fields due to its excellent high-frequency electrical characteristics, outstanding mechanical stability, and lower cost. Electromigration is one of the common failure modes in electronic components, so it is important to study the reliability of TGV interconnection structures under high current density. In this paper, the electromigration of an RDL-TGV has been investigated by finite element simulation and experiment. Simulation results show that RDL-TGV junction is the most vulnerable area for failure. The experimental results show that the electromigration voids are concentrated on the RDL side near the TGV-RDL junction. The growth mechanism of the electromigration voids in the RDL-TGV structure is summarized. The results of simulation and experiment can provide guidance for the study of electromigration reliability of TGV interconnection.