Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD

被引：0

作者：

Wang, Xiaoye ^{[1
,2
,3
,4
]}

Pan, Huayong ^{[5
,6
]}

Yang, Xiaoguang ^{[7
,8
]}

Yang, Tao ^{[7
,8
]}

机构：

[1] Lanzhou Univ Technol, Coll Elect & Informat Engn, Lanzhou 730050, Peoples R China

[2] Lanzhou Univ Technol, Key Lab Gansu Adv Control Ind Proc, Lanzhou 730050, Peoples R China

[3] Lanzhou Univ Technol, Natl Demonstrat Ctr Expt Elect & Control Engn Educ, Lanzhou 730050, Peoples R China

[4] Lanzhou Univ Technol, Lab Nanoscale Semicond Measurement, Lanzhou 730050, Peoples R China

[5] Peking Univ, Bejing Key Lab Quantum Devices, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[6] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[7] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China

[8] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 988卷

基金：

中国国家自然科学基金;

关键词：

Surface oxide layer; InAs nanowires; Zinc blende; Hexagonal wurtzite; Self-catalyzed growth; MOCVD;

D O I：

10.1016/j.jallcom.2024.174312

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied the crystal structure of self-catalyzed InAs nanowires with different diameters grown on Si Substrate by metal-organic chemical vapor deposition (MOCVD) and found that oxidation degree and nanowire diameter directly affect the lattice structure of InAs nanowire. In the non-oxidized state of InAs nanowires, when the diameter is greater than 160 nm, the lattice structure is mainly cubic zinc blende (ZB) structure. When the diameter is between 121 nm and 80 nm, ZB structure and hexagonal wurtzite (WZ) structure coexist. When the diameter is less than 66 nm, the lattice structure is mainly WZ structure. In the fully oxidized state of InAs nanowires, a stable layer of In 2 O 3 is formed on its surface, and InAsO 4 will be formed inside due to infiltrated oxygen atoms. When InAs nanowires are made into nanoelectronic devices as the core material, if oxidation is not prevented, InAs material with excellent electrical conductivity will also become InAsO 4 .

引用

页数：9

共 32 条

[31] Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications
Alshahrie, Ahmed
Juodkazis, S.
Al-Ghamdi, A. A.
Hafez, M.
Bronstein, L. M.
OPTICS AND LASER TECHNOLOGY, 2017, 95 : 29 - 35
[32] Crystal structure analysis of epitaxial BiFeO3-BiCoO3 solid solution films grown by metalorganic chemical vapor deposition
Yasui, Shintaro
Nishida, Ken
Naganuma, Hiroshi
Okamura, Soichiro
Iijima, Takashi
Funakubo, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10B): : 6948 - 6951

← 1 2 3 4 →