Enhanced Thermal Stability and Reduced Specific Contact Resistivity in Titanium-Based Ohmic Contact With an Ultra-Thin Molybdenum Interlayer

被引：1
|
作者：
Chen, Xu [1 ,2 ,3 ]
Xu, Jing [1 ,2 ,3 ]
Mao, Shujuan [4 ]
He, Yanping [1 ,2 ,3 ]
Gao, Jianfeng [1 ,2 ]
Liu, Weibing [1 ,2 ]
Sun, Xianglie [4 ]
Wang, Guilei [4 ]
Zhao, Chao [4 ]
Luo, Jun [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Integrated Circuit Adv Proc R&D Ctr, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Key Lab Fabricat Technol Integrated Circuits, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
[4] Beijing Superstring Acad Memory Technol, Beijing, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 07期
关键词：
Thermal stability; Annealing; Silicides; Silicon; Conductivity; Thermal resistance; Random access memory; Titanium silicide; molybdenum interlayer; thermal stability; contact resistivity; PHASE; TISI2;
D O I：
10.1109/LED.2024.3401188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This investigation reveals a practical method for improving thermal stability and reducing the specific contact resistivity (rho c) of titanium-based Ohmic contact. Inserting an ultrathin molybdenum (Mo) layer, with thicknesses ranging from 3 to 10 & Aring;, between titanium (Ti) and heavily doped silicon (Si) substrates effectively impedes the further diffusion of Si into the metal layer. Mo silicide contributes to lowering the temperature required for the formation of the C54-phase Ti silicide by 50 degrees C to 100 degrees C and facilitates the emergence of the low-resistance phase C54-TiSi2. Experimental evidence indicates that the insertion of thinner Mo layers significantly reduces rho c , which remains around the order of 10(-8) Omega & sdot; cm(2) after extensive annealing at 750 degrees C for 30 minutes.
引用
收藏
页码：1281 / 1284
页数：4
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