Highly Sensitive Performance Flexible Deep UV Photodetectors Based on CsCu2I3/Mg0.2Zn0.8O Bulk Heterojunction

被引：0

作者：

Liu, Chengjun ^{[1
]}

Zhang, Yuyi ^{[1
]}

Zhu, Yaoming ^{[1
]}

Wang, Lixi ^{[2
]}

Chang, Jianhua ^{[2
]}

Li, Qing ^{[1
]}

Zhang, Xiaobing ^{[1
]}

Pan, Jiangyong ^{[2
]}

Chen, Jing ^{[1
]}

Lei, Wei ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Engn, Joint Int Res Lab Informat Display & Visualizat, Nanjing 210096, Peoples R China

[2] Nanjing Univ Informat Sci & Technol, Sch Elect & Informat Engn, Nanjing 210044, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 07期

关键词：

Deep UV photodetector; lead free perovskite; flexible; high sensitivity;

D O I：

10.1109/LED.2024.3405194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flexible deep ultraviolet (UV) photodetectors have received extensive attention due to low background noise and high reliability in operation environments. Herein, we demonstrate a highly performance deep UV photodetector based on CsCu2I3/Mg0.2Zn0.8O bulk heterojunction. Mg0.2Zn0.8O quantum dots as electron transfer sites can facilitate the transfer of photogenerated carriers to improve the device performance. As a result, the CsCu2I3/Mg0.2Zn0.8O based photodetector exhibits high responsivity of 1.12 A/W and specific detectivity of 3.26x10(12) Jones. Moreover, the flexible photodetector maintains relatively high performance after 2000 times bending cycles at curvature radius of 5 mm. Our work provides a reliable and low-cost approach for highly performance flexible deep UV photodetection.

引用

页码：1229 / 1232

页数：4