GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

被引：9
作者：
Liang, Fangzhou [1 ]
Zhang, Haochen [1 ]
Zhu, Siqi [2 ]
Yang, Lei [1 ]
Huang, Zhe [1 ]
Liang, Kun [1 ]
Xing, Zhanyong [1 ]
Wang, Hu [1 ]
Zhang, Mingshuo [1 ]
Li, Jiayao [1 ]
Ye, Yankai [1 ]
Sun, Haiding [1 ]
机构：
[1] Univ Sci & Technol China, Sch Microelect, IGaN Lab, Hefei 230026, Anhui, Peoples R China
[2] Sun Yat Sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Shenzhen 518107, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Logic gates; HEMTs; Band structures; Wide band gap semiconductors; Aluminum gallium nitride; Electrons; Absorption; AlGaN; GaN heterojunctions; phototransistors; vacuum ultraviolet;
D O I：
10.1109/LED.2024.3381838
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, a superior vacuum UV phototransistor (VUV PT) in the form of GaN-based HEMT architecture is demonstrated. With tunable gate/drain bias (VGS/VDS), the HEMT-type VUV PT is switchable among three detection modes including photoconduction (-5/10 V), photovoltaics (+/- 0.05/0 V), and self-powering (0/0 V). Strikingly, the device demonstrates record-high responsivity and detectivity under all the operation modes thanks to structural advantages in AlGaN/GaN heterojunction, including the shallow active region, unique band inclinations, and stable surface conditions. Our work highlights the great abilities of GaN-based HEMT as a promising platform to build multi-functional photoelectric systems.
引用
收藏
页码：853 / 856
页数：4
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