GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

被引：7

作者：

Liang, Fangzhou ^{[1
]}

Zhang, Haochen ^{[1
]}

Zhu, Siqi ^{[2
]}

Yang, Lei ^{[1
]}

Huang, Zhe ^{[1
]}

Liang, Kun ^{[1
]}

Xing, Zhanyong ^{[1
]}

Wang, Hu ^{[1
]}

Zhang, Mingshuo ^{[1
]}

Li, Jiayao ^{[1
]}

Ye, Yankai ^{[1
]}

Sun, Haiding ^{[1
]}

机构：

[1] Univ Sci & Technol China, Sch Microelect, IGaN Lab, Hefei 230026, Anhui, Peoples R China

[2] Sun Yat Sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Shenzhen 518107, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Logic gates; HEMTs; Band structures; Wide band gap semiconductors; Aluminum gallium nitride; Electrons; Absorption; AlGaN; GaN heterojunctions; phototransistors; vacuum ultraviolet;

D O I：

10.1109/LED.2024.3381838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a superior vacuum UV phototransistor (VUV PT) in the form of GaN-based HEMT architecture is demonstrated. With tunable gate/drain bias (VGS/VDS), the HEMT-type VUV PT is switchable among three detection modes including photoconduction (-5/10 V), photovoltaics (+/- 0.05/0 V), and self-powering (0/0 V). Strikingly, the device demonstrates record-high responsivity and detectivity under all the operation modes thanks to structural advantages in AlGaN/GaN heterojunction, including the shallow active region, unique band inclinations, and stable surface conditions. Our work highlights the great abilities of GaN-based HEMT as a promising platform to build multi-functional photoelectric systems.

引用

页码：853 / 856

页数：4

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