New growth mechanism of InAs-GaSb core-shell nanowires with polygonal triangular pyramids and quantum dots grown by MOCVD

被引：0
|
作者：
Wang, Xiaoye [1 ,2 ,3 ,4 ]
Yang, Xiaoguang [5 ,6 ]
Yang, Tao [5 ,6 ]
机构：
[1] Lanzhou Univ Technol, Coll Elect & Informat Engn, Lanzhou 730050, Peoples R China
[2] Lanzhou Univ Technol, Key Lab Gansu Adv Control Ind Proc, Lanzhou 730050, Peoples R China
[3] Lanzhou Univ Technol, Natl Demonstrat Ctr Expt Elect & Control Engn Educ, Lanzhou 730050, Peoples R China
[4] Lanzhou Univ Technol, Lab Nanoscale Semicond Measurement, Lanzhou 730050, Peoples R China
[5] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China
[6] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
VACUUM | 2024年 / 225卷
基金：
中国国家自然科学基金;
关键词：
InAs/GaSb; Polygonal triangular pyramid; Heterojunction nanowires; Self -catalyzed growth; MOCVD; GAAS NANOWIRES;
D O I：
10.1016/j.vacuum.2024.113245
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, new growth mechanism of InAs/GaSb heterojunction nanowires grown by MOCVD has been investigated. A spear -shaped structure was firstly formed at the top of nanowires and GaAsSb quantum dots were firstly grown on the side walls of the nanowires by self -catalyzed mode. It is found that the length of InAs-GaSb nanowires in core -shell structure plays an important role in the formation of polygonal triangular pyramids and quantum dots structures. The shorter InAs nanowires become, the larger the polygonal triangular pyramid will be formed while the longer InAs nanowires become, the smaller the polygonal triangular pyramid will be formed, and quantum dots will appear on the side walls of nanowires. This new mechanism and growth technology will be conducive to the preparation of quantum dots attached to the surface of nanowires.
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页数：7
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