Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

被引：3
作者：
Balage, Pierre [1 ]
Lafargue, Manon [1 ,2 ]
Guilberteau, Theo [1 ,3 ]
Bonamis, Guillaume [2 ]
Honninger, Clemens [2 ]
Lopez, John [1 ]
Manek-Honninger, Inka [1 ]
机构：
[1] Univ Bordeaux, CNRS, CEA, CELIA UMR 5107, F-33405 Talence, France
[2] AMPLITUDE, Cite Photon, F-33600 Pessac, France
[3] ALPhANOV, Rue Francois Mitterrand, F-33400 Talence, France
来源：
MICROMACHINES | 2024年 / 15卷 / 05期
关键词：
ultrafast laser processing; femtosecond bursts; laser-material interaction; silicon; percussion drilling; WAVE-GUIDES; CRYSTALLINE SILICON; ABLATION; WRITTEN; MICRO; CELLS;
D O I：
10.3390/mi15050632
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
In this contribution, we present novel results on top-down drilling in silicon, the most important semiconductor material, focusing specifically on the influence of the laser parameters. We compare the holes obtained with repetitive single pulses, as well as in different MHz- and GHz-burst regimes. The deepest holes were obtained in GHz-burst mode, where we achieved holes of almost 1 mm depth and 35 mu m diameter, which corresponds to an aspect ratio of 27, which is higher than the ones reported so far in the literature, to the best of our knowledge. In addition, we study the influence of the energy repartition within the burst in GHz-burst mode.
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页数：13
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