Bulk Photovoltaic Effect in Single Ferroelectric Domain of SnS Crystal and Control of Local Polarization by Strain

被引：4

作者：

Nanae, Ryo ^{[1
]}

Kitamura, Satsuki ^{[1
]}

Chang, Yih-Ren ^{[2
]}

Kanahashi, Kaito ^{[1
]}

Nishimura, Tomonori ^{[1
]}

Moqbel, Redhwan ^{[3
]}

Lin, Kung-Hsuan ^{[3
]}

Maruyama, Mina ^{[4
]}

Gao, Yanlin ^{[4
]}

Okada, Susumu ^{[4
]}

Qi, Kai ^{[5
]}

Fu, Jui-Han ^{[5
]}

Tung, Vincent ^{[5
]}

Taniguchi, Takashi ^{[6
]}

Watanabe, Kenji ^{[7
]}

Nagashio, Kosuke ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, 7-3-1 Hongo,Bunkyo Ku, Tokyo 1138656, Japan

[2] RIKEN, Nanoscale Quantum Photon Lab, Cluster Pioneering Res, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[3] Acad Sinica, Inst Phys, 128,Sec 2,Acad Rd, Taipei 115201, Taiwan

[4] Univ Tsukuba, Dept Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058571, Japan

[5] Univ Tokyo, Dept Chem Syst Engn, 7-3-1 Hongo,Bunkyo Ku, Tokyo 1138656, Japan

[6] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[7] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

ADVANCED FUNCTIONAL MATERIALS | 2024年 / 34卷 / 41期

关键词：

2D materials; bulk photovoltaic effect; ferroelectric domain; group IV monochalcogenides; poling; CONDUCTION; WALLS; EFFICIENCY; LIMIT;

D O I：

10.1002/adfm.202406140

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The bulk photovoltaic effect (BPVE) in ferroelectrics, wherein spontaneous polarization can be reversed within crystals lacking centrosymmetry, encompasses the significant contribution of ferroelectric domain walls (DWs), known as DW-PVE. Nevertheless, the separation between intrinsic BPVE within the domain and DW-PVE remains unexplored in 2D ferroelectrics, notwithstanding its significant importance. In this study, sizable crystals of 2D ferroelectric SnS are successfully grown, facilitating a comprehensive yet intricate examination of domain configurations utilizing polarized optical microscopy and piezoresponse force microscopy. By properly selecting the large ferroelectric single domain within SnS crystals, uniform intrinsic BPVE across the domain is unequivocally demonstrated. Furthermore, to further enhance intrinsic BPVE, manipulation of strain poling increased photocurrent, suggesting that locally distributed polarizations due to imperfection introduced in SnS crystals are aligned by strain. These results will offer a new avenue for rigorous comprehension of DW-PVE in 2D ferroelectrics. By properly selecting the large ferroelectric single domain in SnS crystals, uniform intrinsic BPVE throughout the domain is clearly demonstrated. To further enhance BPVE, manipulation of strain poling increased photocurrent, suggesting that locally distributed polarizations due to imperfection introduced in SnS crystals are aligned by strain. image

引用

页数：10