Atomic diffusion and electrical reliability of NiAl/SiO2 interconnect: Breakdown voltage and TDDB characteristics

This study reports the effects of post-annealing on the electrical reliability of a NiAl/SiO2 interconnect structure for potential use as post-Cu interconnect. Our materials characterization using transmission electron microscopy and secondary ion mass spectrometry discloses that annealing at elevated temperatures induced the diffusion of Al into SiO2: Al, for a 400 degrees C-annealed sample, diffused only to a few nanometers from the interface, forming a thin aluminum-rich oxide layer, while samples annealed at higher temperatures show an extensive Al diffusion and interfacial reactions. In a voltage ramp dielectric breakdown test, the 400 degrees C annealed sample shows the lowest breakdown voltage, possibly, due to the aluminum-rich oxide layer serving as a self-forming barrier while the samples annealed at higher temperatures display a drastic reliability degradation with the annealing temperature increasing. In addition, analyzing data acquired from time-dependent dielectric breakdown tests using the E-model helps us predict the lifetime of the 400 degrees C sample to be longer than 10(5) h at 1 MV/cm.