Effect of substrate temperature and position on properties of Cu 3 N thin films deposited by reactive radio frequency magnetron sputtering

Copper nitride (Cu 3 N) thin films were deposited on soda lime glass (SLG) substrates by reactive radio frequency (RF) magnetron sputtering using a pure Cu target in the presence of argon and nitrogen. The structural, optical, and electrical properties of the Cu 3 N films were investigated systematically on substrate temperature and position, demonstrating that both parameters strongly influence the properties of Cu 3 N thin films. XRD patterns revealed the formation of the Cu 3 N phase at all substrate temperatures and positions. The transmittance of the Cu 3 N thin films was over 80 % in the transparent region and the band gap for Cu 3 N was determined to 1.7 -1.9 eV with a very high absorption coefficient above 10 4 cm- 1 . The n-type conductivity was observed in every Cu 3 N film but the resistivity varied considerably with both substrate temperature and position. The promising physical properties of Cu 3 N thin films suggest their potential application in optoelectronic devices such as thin film solar cells.