Degradation of Si/SiC Hybrid Switch under AC power cycle

被引：0

作者：

Ding, Yuzhou ^{[1
]}

Jiang, Xi ^{[1
]}

Yu, Hengyu ^{[1
]}

Yin, Xin ^{[1
]}

Wang, Bo ^{[1
]}

Wang, Jun ^{[1
]}

Yan, Hui ^{[2
]}

机构：

[1] Hunan Univ, Coll Elect & Informat Engn, Changsha, Peoples R China

[2] Changzhou Ruihua Power Elect Device Co Ltd, Changzhou, Jiangsu, Peoples R China

来源：

2022 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC | 2022年

关键词：

SiC MOSFET; IGBT; Hybrid switch; real-time measurement; AC power cycle; ageing; reliability;

D O I：

10.1109/APEC43599.2022.9773458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Si/SiC hybrid switch (HyS) composed of Si IGBT and SiC MOSFET has advantages in reducing cost and improving efficiency, but the reliability of HyS under long-term stress has not been sufficiently studied. In this paper, the HyS is composed of two discrete devices, 1200V 12A SiC MOSFET (C3M0160120D) and 1200V 40A Si IGBT (IGW40T120) in parallel. The degradation mechanisms of HyS are analyzed and investigated under AC power cycle. And the variation turn-off delay time also are considered. The on-state voltage of HyS is real-time monitored by on-line detection circuit. Combined with the online monitoring results and the degradation of static parameters of HyS phenomena, the degradation mechanism of HyS was verified.

引用

页码：1653 / 1657

页数：5

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