A Single Memristor-based TTL NOT logic

被引:0
|
作者
Choudhury, Hirakjyoti [1 ]
Paul, Suvankar [1 ]
Deb, Deepjyoti [1 ]
Das, Prachuryya Subash [1 ]
Goswami, Rupam [1 ]
机构
[1] Tezpur Univ, Dept Elect & Commun Engn, Napaam, India
来源
TECNOLOGIA EN MARCHA | 2023年 / 36卷
关键词
Memristor; NOT logic; hysteresis; green electronics; biodegradable electronics;
D O I
10.18845/tm.v36i6.6771
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
This article presents a NOT logic gate circuit based on a single memristor, and analyzes it for different biological memristive samples based on extracted resistances. The simple resistor-voltage representation of the memristor in the logic circuit is used to formulate a methodology to tune the parameters of the circuit in accordance with TTL voltage values. The logic circuit consists of two resistors in series with the memristor. The input is connected to one end of the memristor, and the output is drawn across the series connection of the second resistor, and the memristor. The methodology comprises of two steps, where, in the first step, the logic 'low' TTL-input voltages are examined, and in the second step, the circuit is evaluated for logic 'high' TTL-input voltages. The methodology reveals that there is a m & iacute;nimum voltage value of 'high' TTL-input beyond which the output does not fall within the logic 'low' TTL-output. The proposed technique may be extended to evaluate novel memristive materials for single memristor-based NOT logic.
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页数:96
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