Memory effects in 45-nm PDSOI MOSFETs at Cryogenic Temperatures for Quantum Computing Applications

被引:0
|
作者
Gupta, Sumreti [1 ]
Sharma, Deepesh [1 ]
Srinivasan, Purushothaman [2 ]
Dixie, Abhisek [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Elect Engn, New Delhi, India
[2] GlobalFoundries, Malta, NY USA
来源
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年
关键词
Cryogenic; Inverter; Quiescent point;
D O I
10.1109/EDTM58488.2024.10511945
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, floating body related memory effects in PDSOI MOSFETs are investigated using different quiescent (Q)-point conditions for pulsed IV characteristics measured from 300K to 10K. It is observed that depending on the Q-point condition, body charge fluctuations result in drain current dispersions. These dispersions decrease as temperature is ramped down to the cryogenic range. The observed memory effects due to the body charge fluctuations are modeled using BSIM-SOI based GlobalFoundries PDK models. Furthermore, the circuit implications of the transient instabilities are examined to evaluate the performance of PDSOI based CMOS circuits at cryogenic temperatures for their application in co-integrated cryogenic quantum electronics.
引用
收藏
页码:91 / 93
页数:3
相关论文
共 16 条
  • [1] Compact Modeling of Quantum Transport in 55-nm MOSFETs at Cryogenic Temperatures
    Chen, Yuefeng
    Zhang, Yuanke
    Huang, Jixiang
    Xu, Jun
    Luo, Chao
    Guo, Guoping
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (09) : 1392 - 1395
  • [2] Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs
    Parihar, Shivendra Singh
    Thomann, Simon
    Pahwa, Girish
    Chauhan, Yogesh Singh
    Amrouch, Hussam
    IEEE OPEN JOURNAL OF CIRCUITS AND SYSTEMS, 2023, 4 : 258 - 270
  • [3] Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures
    Yan, Xiaodong
    Wang, Han
    Barnaby, Hugh
    Esqueda, Ivan Sanchez
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 18 (03) : 456 - 462
  • [4] Hybrid Cryogenic Memory Cells for Superconducting Computing Applications
    Yau, Jeng-Bang
    Fung, Yat-Kiu-Kent
    Gibson, Gerald W., Jr.
    2017 IEEE INTERNATIONAL CONFERENCE ON REBOOTING COMPUTING (ICRC), 2017, : 325 - 327
  • [5] Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing
    Beckers, Arnout
    Jazaeri, Farzan
    Ruffino, Andrea
    Bruschini, Claudio
    Baschirotto, Andrea
    Enz, Christian
    2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2017, : 62 - 65
  • [6] Nonlinear behaviors in back-gate effects of FDSOI MOSFETs at cryogenic temperatures
    Hu, Yibo
    Ren, Zhipeng
    Yin, Yizhe
    Chen, Jing
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (08)
  • [7] Effective Channel Mobility Extraction and Modeling of 10-nm Bulk CMOS FinFETs in Cryogenic Temperature Operation for Quantum Computing Applications
    Gupta, Sumreti
    Singh, Sujit Kumar
    Vega, Reinaldo A.
    Dixit, Abhisek
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1815 - 1822
  • [8] Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications
    Zhang, Miaomiao
    Qian, Haoji
    Xu, Jiacheng
    Ma, Minglei
    Shen, Rongzong
    Lin, Gaobo
    Gu, Jiani
    Liu, Yan
    Jin, Chengji
    Chen, Jiajia
    Han, Genquan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (11) : 6680 - 6685
  • [9] A Cryogenic 1 GSa/s, Soft-Core FPGA ADC for Quantum Computing Applications
    Homulle, Harald
    Visser, Stefan
    Charbon, Edoardo
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2016, 63 (11) : 1854 - 1865
  • [10] Forward Body Bias Technique in DRAM Peripheral Transistor at Cryogenic Temperature for Quantum Computing Applications
    You, Hyunseo
    An, Jehyun
    Nam, Kihoon
    Kang, Bohyeon
    Park, Jongseo
    Lee, Namhyun
    Lee, Seonhaeng
    Baek, Rock-Hyun
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,