Sn doping enhanced current rectification in MAPbBr3 nanocrystal-metal junction for photodetection

Perovskite nanocrystals have attracted significant research interest in the last decade due to their improved performance in the field of optoelectronics. In this report, we have represented the Schottky device performance fabricated by undoped and Sn doped MAPbBr(3) nanocrystals (NCs). The nanocrystals were synthesized at room temperature (RT) using ligand assisted re-precipitation method (LARP). Optical and structural analysis of the grown nanocrystals were caried out by UV-vis absorbance spectroscopy, photoluminescence spectroscopy and x-ray diffraction method. Schottky devices were fabricated and characterized by current-voltage (I-V) characteristics and electrochemical impedance spectroscopy (EIS) under both dark and illumination conditions. Enhancement of the device current under illumination specifies generation of photocurrent in the device. Impedance spectra of sandwiched devices have been recorded in the wide range of frequency from 100 kHz to 2 MHz at 500 mV biasing. From I - V characteristics, important parameters like ideality factor (eta), saturation current (I-0), barrier height (phi(B)), rectification ratio (RR) were obtained under dark and photo condition. Copyright (c) 2022 Elsevier Ltd. All rights reserved.