Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

被引：1

作者：

Huang, Haiming ^{[1
,2
]}

Chen, Mu ^{[3
]}

Song, Dezhi ^{[1
,2
]}

Zhang, Jun ^{[1
,2
]}

Jiang, Ye-ping ^{[1
,2
]}

机构：

[1] East China Normal Univ, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China

[2] East China Normal Univ, Dept Elect, Shanghai 200241, Peoples R China

[3] Beijing WeLion New Energy Technol Co Ltd, Beijing 102402, Peoples R China

来源：

PHYSICAL REVIEW B | 2024年 / 109卷 / 11期

关键词：

SINGLE DIRAC CONE; WEAK ANTILOCALIZATION; SURFACE-STATES; REAL-SPACE; BI2SE3; LOCALIZATION; CROSSOVER; BI2TE3;

D O I：

10.1103/PhysRevB.109.115414

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the ultrathin regime, Bi2Te3 films feature two surfaces (with each surface being a two-dimensional Diracfermion system) with complicated spin textures and a tunneling term between them. We find in this regime that the quasiparticle scattering is completely different compared with the thick-film case and even behaves differently at each thickness. The thickness-dependent warping effect and tunneling term are found to be the two main factors that govern the scattering behaviors. The interband backscattering that signals the existence of a tunneling term is found to disappear at four quintuple layers by the step-edge reflection approach. A four-band model is presented that captures the main features of the thickness-dependent scattering behaviors. Our work clarifies that the prohibition of backscattering guaranteed by symmetry in topological insulators breaks down in the ultrathin regime.

引用

页数：5

共 29 条

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