Highly sensitive full solar-blind ultraviolet spectrum detection and imaging based on PdSe2/Ga2O3 vdW heterojunction

被引:7
作者
Cao, Xiaolin [1 ]
Liu, Kunxuan [2 ]
Wu, Di [1 ]
Zhou, Zhiman [1 ]
Lin, Pei [1 ]
Zhuo, Ranran [1 ]
Shi, Zhifeng [3 ]
Hu, Xin [4 ]
Zeng, Longhui [1 ]
Li, Xinjian [1 ]
机构
[1] Zhengzhou Univ, Minist Educ, Sch Phys, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China
[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[3] Zhengzhou Univ, Minist Educ, Sch Phys, Int Joint Lab Integrated Circuits Design & Applica, Zhengzhou 450052, Peoples R China
[4] Soochow Univ, Sch Optoelect Sci & Engn, Suzhou 215006, Peoples R China
基金
中国国家自然科学基金;
关键词
PHOTODETECTOR;
D O I
10.1364/OL.532885
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Solar-blind ultraviolet (UV) photodetectors are in great demand for both military and civilian applications. Here, we have successfully demonstrated the synthesis of the Sn-doped Ga2O3 films with controllable bandgaps to construct PdSe2/Ga2O3 van der Waals (vdW) heterojunctions achieving highly sensitive full solar-blind UV spectrum detection. The assembled device demonstrates a full solar-blind UV spectral self-powered response, with a large responsivity of 123.5 mA/W, a high specific detectivity of 1.63 x 10(13) Jones, and a rapid response time of 0.15/2.3 ms. Importantly, an outstanding solar-blind UV imaging application based on an integrated PdSe2/Ga2O3 device array has been demonstrated. Our work paves a feasible path toward achieving highly sensitive solar-blind UV detecting and imaging based on wide-bandgap Ga2O3 films. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
引用
收藏
页码:5324 / 5327
页数:4
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