Molecular dynamics simulation of the interaction of an Ar/CH4 plasma with a surface: Growth, structure, and sputtering of the deposited C:H films

被引：0

作者：

Kandjani, Glenn Otakandza ^{[1
]}

Brault, Pascal ^{[1
,3
]}

Mikikian, Maxime ^{[1
]}

Michau, Armelle ^{[2
]}

Hassouni, Khaled ^{[2
]}

机构：

[1] Univ Orleans, GREMI, CNRS, UMR7344, Orleans, France

[2] Univ Sorbonne Paris Nord, CNRS, LSPM, UPR3407, Villetaneuse, France

[3] Univ Orleans, GREMI, CNRS, F-45067 Orleans 2, France

来源：

PLASMA PROCESSES AND POLYMERS | 2024年 / 21卷 / 08期

关键词：

film growth; hydrocarbon plasma; ion bombardment; molecular dynamics; CHEMICAL-KINETICS; METHANE; HYDROCARBONS; ELECTRON; ATOM;

D O I：

10.1002/ppap.202400084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular dynamics simulations were performed to investigate the growth of hydrocarbon films with a surface at temperatures from 300 to 1000 K. The results show that C2H is the main precursor of film growth. The formed C:H films are mainly unsaturated and dominated by double bonds and CN3 carbon atoms. The evolution of the C:H film is considered under the bombardment of the two major ions (Ar+ and C2H3+) with energies ranging from 50 to 100 eV. Film sputtering is significant above 50 eV, while at lower energies, the atoms of the C2H3+ ions can be incorporated and contribute to the growth.

引用

页数：14

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