Two-dimensional materials based memtransistors: Integration strategies, switching mechanisms and advanced characterizations

Two-dimensional (2D) materials -based memtransistors offer a wide range of programmable memory characteristics, high energy efficiency, rapid response, high integration density, and flexible expandability, which have led to significant potential in the field of novel artificial intelligence applications, such as brain -inspired neural computing and the integration of artificial multi -sensory neurons. A clear understanding of the switching mechanism forms the foundation for the advancement and application of memristors. While traditional vertical structure memristors have well -established switching mechanisms, research on the switching mechanisms of 2D material -based memtransistors has only emerged in recent years. In this paper, the concept and background of memtransistors are outlined by describing the material synthesis strategy and device structure. The latest research progress on switching mechanisms associated with memtransistors, including valence change mechanism, charge trapping/detrapping, phase change, and ferroelectric resistance switching have been highlighted. More importantly, the application of advanced electron microscopy, spectroscopy, and simulation calculations to explore the intrinsic links between switching mechanisms and the inherent physicochemical properties, intrinsic defects, and or interfacial doping defects of 2D materials are throughout emphasized. Finally, the new research hotspots for novel applications of 2D material memtransistors are briefly introduced as well and the prospects for future research are proposed.