A Self-Biased Subthreshold CMOS Voltage Reference With Temperature Compensation Circuit for IoT Self-powered Sensor Applications

被引：0

作者：

Huang, Yuxuan ^{[1
]}

Yan, Feng ^{[1
]}

Sun, Kangkang ^{[1
]}

Liu, Jingjing ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Commun Engn, Shenzhen, Peoples R China

来源：

2023 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, APCCAS | 2024年

基金：

美国国家科学基金会;

关键词：

CMOS voltage reference (VR); subthreshold; selfbiased; low power; line sensitivity; low supply voltage; temperature coefficient; low area;

D O I：

10.1109/APCCAS60141.2023.00040

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a subthreshold CMOS voltage reference structure that utilizes self-biased circuits. This voltage reference includes temperature compensation circuits to expand its operating temperature range and reduce its temperature coefficient. The proposed CMOS voltage reference is designed using a standard 0.18-mu m CMOS process and has a small area of only 0.005 mm(2). Post-layout simulation results demonstrate that the power consumption of the circuit at room temperature (25 degrees C) is only 1.65 nW at a power supply voltage of 1 V. In this case, the voltage reference output is 316.56 mV, with a temperature coefficient (TC) of 2.79 ppm/. in a wide temperature range from -40 degrees C to 140 degrees C. Furthermore, the line sensitivity (LS) of the circuit is 0.022 %/V.

引用

页码：134 / 138

页数：5

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