Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Sii-defect mode

被引：0

作者：

Lauer, Kevin ^{[1
,2
,3
]}

Reiss, Stephanie ^{[1
]}

Flototto, Aaron ^{[2
,3
]}

Peh, Katharina ^{[2
,3
]}

Bratek, Dominik ^{[2
,3
]}

Mueller, Robin ^{[2
,3
]}

Schulze, Dirk ^{[2
,3
]}

Beenken, Wichard ^{[2
,3
]}

Hiller, Erik ^{[1
]}

Ortlepp, Thomas ^{[1
]}

Krischok, Stefan ^{[2
,3
]}

机构：

[1] CiS Forschungsinst Mikrosensor GmbH, Erfurt, Germany

[2] TU Ilmenau, Inst Phys, Ilmenau, Germany

[3] Inst Mikro & Nanotechnol, Ilmenau, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2024年 / 555卷

关键词：

IRRADIATED SILICON; RADIATION; DAMAGE;

D O I：

10.1016/j.nimb.2024.165472

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A Si-Si i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the BSi-Sii-defect Si-Si i-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the BSi-Sii-defect Si-Si i-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light- induced degradation (LID) treatments.

引用

页数：5

共 37 条

[1]

Abe T., 1999, P 3 INT S DEF SIL

[2] Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs [J].

Akkerman, A ;

Barak, J ;

Chadwick, MB ;

Levinson, J ;

Murat, M ;

Lifshitz, Y .

RADIATION PHYSICS AND CHEMISTRY, 2001, 62 (04) :301-310

[3] Electronically activated boron-oxygen-related recombination centers in crystalline silicon [J].

Bothe, K ;

Schmidt, J .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)

[4] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].

BOURGOIN, JC ;

CORBETT, JW .

PHYSICS LETTERS A, 1972, A 38 (02) :135-&

[5]

Bratek D., 2023, Investigation of properties of the P-line with respect to the ASiSiidefect

[6] Non-equilibrium impurity redistribution in Si [J].

Buzynin, AN ;

Luk'yanov, AE ;

Osiko, VV ;

Voronkov, VV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 :366-370

[7] Annealing kinetics of boron-containing centers in electron-irradiated silicon [J].

Feklisova, O. V. ;

Yarykin, N. A. ;

Weber, J. .

SEMICONDUCTORS, 2013, 47 (02) :228-231

[8] Iron and its complexes in silicon [J].

Istratov, AA ;

Hieslmair, H ;

Weber, ER .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (01) :13-44

[9] On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors [J].

Juhl, Mattias Klaus ;

Heinz, Friedemann D. ;

Coletti, Gianluca ;

Rougieux, Fiacre E. ;

Sun, Chang ;

Contreras, Michelle V. ;

Niewelt, Tim ;

Krich, Jacob ;

Schubert, Martin C. .

IEEE JOURNAL OF PHOTOVOLTAICS, 2023, 13 (04) :524-534

[10]

Kimerling L. C., 1989, Materials Science Forum, V38-41, P141, DOI 10.4028/www.scientific.net/MSF.38-41.141

← 1 2 3 4 →