Microscopic understanding of the in-plane thermal transport properties of 2 H transition metal dichalcogenides

被引:12
作者
Farris, Roberta [1 ]
Hellman, Olle [2 ]
Zanolli, Zeila [3 ]
Reig, David Saleta [1 ,4 ]
Varghese, Sebin [1 ,4 ]
Ordejon, Pablo [1 ]
Tielrooij, Klaas-Jan [1 ,4 ]
Verstraete, Matthieu Jean [5 ,6 ,7 ]
机构
[1] Catalan Inst Nanosci & Nanotechnol ICN2 BIST & CSI, Campus UAB, Bellaterra 08193, Barcelona, Spain
[2] Weizmann Inst Sci, Dept Mol Chem & Mat Sci, IL-7610001 Rehovot, Israel
[3] Univ Utrecht, Debye Inst Nanomat Sci Condensed Matter & Interfac, Chem Dept, POB 80-000, NL-3508 TA Utrecht, Netherlands
[4] TU Eindhoven, Dept Appl Phys, Den Dolech 2, NL-5612 AZ Eindhoven, Netherlands
[5] Univ Liege, Nanomat Q mat CESAM, Dept Phys, B-4000 Liege, Belgium
[6] European Theoret Spect Facil, B-4000 Liege, Belgium
[7] ITP Utrecht Univ, Phys Dept, NL-3508 TA Utrecht, Netherlands
关键词
IRREVERSIBLE-PROCESSES; MONOLAYER MOS2; CONDUCTIVITY; ORDER; BULK;
D O I
10.1103/PhysRevB.109.125422
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transition metal dichalcogenides (TMDs) are a class of layered materials that hold great promise for a wide range of applications. Their practical use can be limited by their thermal transport properties, which have proven challenging to determine accurately, both from a theoretical and experimental perspective. We have conducted a thorough theoretical investigation of the thermal conductivity of four common TMDs, MoSe 2 , WSe 2 , MoS 2 , and WS 2 , at room temperature, to determine the key factors that influence their thermal behavior. We analyze these materials using ab initio calculations performed with the SIESTA program, anharmonic lattice dynamics and the Boltzmann transport equation formalism, as implemented in the temperature -dependent effective potentials method. Within this framework, we analyze the microscopic parameters influencing the thermal conductivity, such as the phonon dispersion and the phonon lifetimes. The aim is to precisely identify the origin of differences in thermal conductivity among these canonical TMD materials. We compare their in -plane thermal properties in monolayer and bulk form, and we analyze how the thickness and the chemical composition affect the thermal transport behavior. We showcase how bonding and the crystal structure influence the thermal properties by comparing the TMDs with silicon, reporting the cases of bulk silicon and monolayer silicene. We find that the interlayer bond type (covalent vs. van der Waals) involved in the structure is crucial in the heat transport. In two-dimensional silicene, we observe a reduction by a factor similar to 15 compared to the Si bulk thermal conductivity due to the smaller group velocities and shorter phonon lifetimes. In the TMDs, where the group velocities and the phonon bands do not vary significantly passing from the bulk to the monolayer limit, we do not see as strong a decrease in the thermal conductivity: only a factor 2-3. Moreover, our analysis reveals that differences in the thermal conductivity arise from variations in atomic species, bond strengths, and phonon lifetimes. These factors are closely interconnected and collectively impact the overall thermal conductivity. We inspect each of them separately and explain how they influence the heat transport. We also study artificial TMDs with modified masses, in order to assess how the chemistry of the compounds modifies the microscopic quantities and thus the thermal conductivity.
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页数:14
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