Demonstration of the p-GaN gate HEMT with crystalline GaOx/GaOxN1-x passivation

被引：0

作者：

Zhang, Yuanlei ^{[1
,2
]}

Duan, Jiachen ^{[1
,2
]}

Liang, Ye ^{[1
,2
]}

Wang, Weisheng ^{[1
,2
]}

Kong, Zhijie ^{[1
,2
]}

Zhang, Jie ^{[3
]}

Liu, Wen ^{[1
,2
]}

机构：

[1] Xian Jiaotong Liverpool Univ, Sch Adv Technol, Suzhou 215123, Peoples R China

[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[3] Xian Jiaotong Liverpool Univ, Sch Chips, Entrepreneur Coll, Suzhou 215123, Peoples R China

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

基金：

国家重点研发计划;

关键词：

p-GaN; HEMT; oxygen plasma treatment; passivation; TECHNOLOGY;

D O I：

10.1109/ISPSD59661.2024.10579618

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We investigate GaN HEMT devices with a crystalline GaOx/GaOxN1-x passivation layer. The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process (PA), transforms into a GaOx/GaOxN1-x layer, leading to the recovery of the depleted two-dimensional electron gas (2DEG) underneath. The p-GaN HEMTs with GaOx/GaOxN1-x passivation exhibit satisfactory characteristics at a PA temperature of 450 degrees C with an I-ON/I-OFF ratio > 10(8). Additionally, the OFF-state breakdown voltage reached 1018 V for a gate-to-drain separation of 15 mu m. The results indicate the merits of employing GaOx/GaOxN1-x passivation to realize the p-GaN HEMT.

引用

页码：303 / 306

页数：4

共 16 条

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