A wide ultraviolet spectra response photodetector based on epitaxial growth of highly-oriented ε-Ga2O3 crystal on diamond substrate

被引：10

作者：

Yuan, Qilong ^{[1
]}

Wang, Wei ^{[2
]}

Zhang, Wenrui ^{[2
,3
]}

Qiu, Mengting ^{[1
,3
]}

Yang, Mingyang ^{[1
]}

Jia, Zhenglin ^{[1
,3
]}

Wang, Bo ^{[4
]}

Lin, Cheng-Te ^{[1
,3
]}

Nishimura, Kazhihito ^{[1
]}

Chang, Keke ^{[1
,3
]}

Chee, Kuan W. A. ^{[5
]}

Cui, Junfeng ^{[1
]}

Jiang, Nan ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Marine Mat & Related Technol, Zhejiang Key Lab Marine Mat & Protect Technol, Ningbo, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Engn Res Ctr Energy Optoelect Mat &, Ningbo, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China

[4] Saarland Univ, Dept Mat Sci & Engn, Funct Mat, Saarbrucken, Germany

[5] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei, Peoples R China

来源：

FUNCTIONAL DIAMOND | 2023年 / 3卷 / 01期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

Diamond; epsilon-Ga2O3; epitaxial growth; deep ultraviolet photodetector; wide spectra response; GAIN; FILMS;

D O I：

10.1080/26941112.2023.2256360

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In recent years, diamond has shown great potential in solar-blind ultraviolet (UV) photodetection due to its ultrawide bandgap (similar to 5.5 eV) and other superior semiconductor properties. However, the response region of diamond photodetector is usually smaller than 230 nm, which cannot cover the whole solar-blind region from 200 to 280 nm. In this work, an epsilon-Ga2O3/diamond photodetector with wide spectra responsivity from 210 (or even lower) to 260 nm was fabricated. High-quality epsilon-Ga2O3 film with columnar crystal was epitaxially grown on single crystalline CVD diamond substrate by pulse laser deposition (PLD). TEM characterization revealed that the epsilon-Ga2O3 film grew along the <001> orientation on diamond (100) substrate. The deep ultraviolet (DUV) photodetector based on the epsilon-Ga2O3/diamond structure showed a high light-to-dark ratio over 5.7 x 10(4) and good linear response to the incident light power density from 10 to 400 mW/cm(2). Moreover, compared to other photodetectors, the fabricated epsilon-Ga2O3/diamond photodetector achieved high responsivity and wide spectra response region from 210 to 260 nm, with high solar-blind rejection ratio of 104 (R-240/R-280) and 165 (R-210/R-280), respectively. The extension of spectra region with high responsivity of the epsilon-Ga2O3/diamond photodetector can be attributed to the thin thickness of epsilon-Ga2O3 film (around 200 nm) and parts of the DUV light were absorbed by diamond. The high responsivity and wide spectra response region indicate the fabricated epsilon-Ga2O3/diamond photodetector can be used for the detection of ultraviolet in the most of the DUV region.

引用

页数：8

共 28 条

[1] Enhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga2O3 Microflake/MnO Quantum Dots [J].