Rapid growth of SiC single crystals using CVD-SiC block sources via a sublimation method

被引：1

作者：

Jeong, Seong-Min ^{[1
]}

Kim, Yong-Hyeon ^{[1
]}

Sun, Ju-Hyeong ^{[1
]}

Park, Jae-Hyeon ^{[1
]}

Shin, Yun-Ji ^{[1
]}

Bae, Si-Young ^{[1
]}

Kim, Chang-Min ^{[2
]}

Lee, Won-Jae ^{[3
]}

机构：

[1] Korea Inst Ceram Engn & Technol KICET, Semicond Mat Ctr, Jinju 52851, South Korea

[2] Hana Mat Inc, Asan 31413, South Korea

[3] Dong Eui Univ, Dept Mat Engn, Busan 47340, South Korea

来源：

CRYSTENGCOMM | 2024年 / 26卷 / 24期

关键词：

Growth rate - Silicon - Single crystals;

D O I：

10.1039/d4ce00268g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By adopting CVD-SiC recycled blocks as a SiC source, SiC crystals were successfully grown with a high growth rate of 1.46 mm h(-1)via the PVT method. The micropipe density and the dislocation density of the grown crystal suggested good crystal quality despite its high growth rate.

引用

页码：3158 / 3161

页数：5

共 11 条

[1] Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth [J].

Chichignoud, G. ;

Ucar-Morais, M. ;

Pons, M. ;

Blanquet, E. .

SURFACE & COATINGS TECHNOLOGY, 2007, 201 (22-23) :8888-8892

[2]

Hana Materials Inc, US

[3] Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method [J].

Hoshino, Norihiro ;

Kamata, Isaho ;

Kanda, Takahiro ;

Tokuda, Yuichiro ;

Kuno, Hironari ;

Tsuchida, Hidekazu .

APPLIED PHYSICS EXPRESS, 2020, 13 (09)

[4] Fast growth of n-type 4H-SiC bulk crystal by gas-source method [J].

Hoshino, Norihiro ;

Kamata, Isaho ;

Tokuda, Yuichiro ;

Makino, Emi ;

Kanda, Takahiro ;

Sugiyama, Naohiro ;

Kuno, Hironari ;

Kojima, Jun ;

Tsuchida, Hidekazu .

JOURNAL OF CRYSTAL GROWTH, 2017, 478 :9-16

[5]

Kimoto T, 2014, FUNDAMENTALS OF SILICON CARBIDE TECHNOLOGY: GROWTH, CHARACTERIZATION, DEVICES, AND APPLICATIONS, P1

[6] EXPERIMENTAL KINETIC-STUDY OF THE CHEMICAL-VAPOR-DEPOSITION OF SIC-BASED CERAMICS FROM CH3SICL3/H-2 GAS PRECURSOR [J].

LOUMAGNE, F ;

LANGLAIS, F ;

NASLAIN, R .

JOURNAL OF CRYSTAL GROWTH, 1995, 155 (3-4) :198-204

[7] Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block [J].

Luo, Hao ;

Han, Xuefeng ;

Huang, Yuanchao ;

Yang, Deren ;

Pi, Xiaodong .

CRYSTALS, 2021, 11 (12)

[8]

STR Group, About us

[9]

Tokai Carbon Korea Co. Ltd, US

[10]

Tokuda Yuichiro, 2020, Materials Science Forum, V1004, P5, DOI 10.4028/www.scientific.net/MSF.1004.5

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