Chemical mechanical polishing for copper films in integrated circuit wiring layers using an advanced slurry

被引：3
作者：
Liu, Jianghao [1 ,2 ,3 ]
Niu, Xinhuan [1 ,2 ,3 ]
Jia, Yingqian [2 ,3 ,4 ]
Zhan, Ni [1 ,2 ,3 ]
Zou, Yida [1 ,2 ,3 ]
Shi, Yunhui [1 ,2 ,3 ]
Zhou, Jianwei [1 ,3 ]
机构：
[1] Hebei Univ Technol, Sch Elect Informat Engn, Tianjin 300130, Peoples R China
[2] Hebei Collaborat Innovat Ctr Microelect Mat & Tech, Tianjin 300130, Peoples R China
[3] Hebei Engn Res Ctr Microelect Mat & Devices, Tianjin 300130, Peoples R China
[4] Shijiazhuang Univ, Coll Phys & Elect Informat Engn, Shijiazhuang 050031, Peoples R China
来源：
TRIBOLOGY INTERNATIONAL | 2024年 / 198卷
基金：
中国国家自然科学基金;
关键词：
Multi -walled carbon nanotubes; Corrosion inhibitors; Chemical mechanical polishing; Theoretical calculations; CARBON NANOTUBES; CORROSION; STEEL; SURFACTANTS; INHIBITION; GRAPHENE; COBALT; OXIDES; ACID;
D O I：
10.1016/j.triboint.2024.109832
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
In the chemical mechanical polishing process of integrated circuits (IC) copper (Cu) wiring layer, it is difficult to balance between material removal rate (RR) and surface quality. To solve this problem, a novel slurry composed of dodecylbenzene sulfonic acid (DBSA), 2-aminobenzimidazole (2-ABI) and multi -walled carbon nanotubes (MWCNTs) was proposed. The Cu surface roughness of 0.63 nm with RR of 5290 & Aring;/min had been achieved. Polishing, electrochemical experiments and molecular dynamics simulations revealed that when DBSA: 2-ABI= 1: 4, the strongest inhibition effect was obtained. Quantum chemical calculations showed that the strong interaction force of hydrogen bonding between 2-ABI and DBSA greatly enhanced the inhibition efficiency. Surface morphology testing showed that the addition of MWCNTs could effectively reduce scratches.
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页数：12
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