Effect of strain on opto-electronic and thermoelectric properties of 2D SiH monolayer for solar cell and renewable energy applications: A first-principles study

The structural, electrical, optical, and thermal characteristics of SiH monolayer were assessed using firstprinciples based calculations. The SiH monolayer is a semiconductor by nature and we found that the energy band gap remains zero by applying (-10 %, -5%, -2%, 2%, 5 %, 10 %) different orders of strain into this material. The optical characteristics of SiH are examined for photon energies between 0 and 10 eV and electrical, thermal, Seebeck coefficient, and power factor against temperature (300 K 800 K) is reported. SiH monolayer has theoretical power conversion efficiencies up to 20 %. The SiH monolayer under consideration is appropriate for photovoltaic and optoelectronic applications, according to their electrical, optical, and thermoelectric characteristics investigated in the present work.