Analysis and Mitigation of Negative Differential Resistance Effects with Hetero-gate Dielectric Layer in Negative-capacitance Field-effect Transistors

被引：0

作者：

Huo, Honglei ^{[1
]}

Lu, Weifeng ^{[1
]}

Zheng, Xinfeng ^{[1
]}

Wang, Yubin ^{[1
]}

Zhao, Shuaiwei ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Sch Microelect, Hangzhou, Zhejiang, Peoples R China

来源：

INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 2024年 / 54卷 / 01期

基金：

中国国家自然科学基金;

关键词：

negative differential resistance; negative-capacitance field-effect transistor; high-dielectric constant; hetero-gate dielectric; FET;

D O I：

10.33180/InfMIDEM2024.106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative -capacitance field-effect transistors (NCFETs) show promise as low -power devices for the next -generation. However, the negative differential resistance (NDR) effects are inherent in NCFET and adversely affect the design of integrated devices and circuits. In this study, a hetero-gate dielectric NCFET (HGD-NCFET) is proposed and investigated. The HGD-NCFET is formed by partially replacing the ferroelectric layer of NCFET with a high -dielectric constant (high-kappa) material on the drain side to inhibit its NDR effects. The Sentaurus technology computer -aided design simulations demonstrate that the out conductance (GDS), which is used to quantify the NDR effects, increases monotonically as a function of the length of high-kappa material (LHK), and GDS eventually tends to zero in HGD-NCFET. In addition, the other electrical parameters of the HGD-NCFET remained almost unchanged compared to those of the original NCFET.

引用

页数：78

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