Circular terahertz ratchets in a two-dimensionally modulated Dirac system

被引:2
作者
Hild, M. [1 ]
Yahniuk, I. [1 ,2 ]
Golub, L. E. [1 ]
Amann, J. [1 ]
Eroms, J. [1 ]
Weiss, D. [1 ]
Watanabe, K. [3 ]
Ganichev, S. D. [1 ,2 ]
Taniguchi, T. [4 ]
机构
[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany
[2] PAS, CENTERA Labs, Inst High Pressure Phys, PL-01142 Warsaw, Poland
[3] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan
[4] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
来源
PHYSICAL REVIEW RESEARCH | 2024年 / 6卷 / 02期
基金
欧洲研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; GRAPHENE; RADIATION; DETECTORS;
D O I
10.1103/PhysRevResearch.6.023308
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a few-layer graphene gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose direction reverses when the radiation helicity is switched. The circular ratchet effect is demonstrated for room temperature and a radiation frequency of 2.54 THz. It is shown that the ratchet current magnitude can be controllably tuned by the patterned and uniform back gate voltages. The results are analyzed in the light of the developed microscopic theory considering electronic and plasmonic mechanisms of the ratchet current formation.
引用
收藏
页数:9
相关论文
共 42 条
  • [1] Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna
    Abidi, E.
    Khan, A.
    Delgado-Notario, J. A.
    Clerico, V.
    Calvo-Gallego, J.
    Taniguchi, T.
    Watanabe, K.
    Otsuji, T.
    Velazquez, J. E.
    Meziani, Y. M.
    [J]. NANOMATERIALS, 2024, 14 (04)
  • [2] Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors
    Bandurin, D. A.
    Gayduchenko, I.
    Cao, Y.
    Moskotin, M.
    Principi, A.
    Grigorieva, I. V.
    Goltsman, G.
    Fedorov, G.
    Svintsov, D.
    [J]. APPLIED PHYSICS LETTERS, 2018, 112 (14)
  • [3] Room-Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures
    Boubanga-Tombet, Stephane
    Knap, Wojciech
    Yadav, Deepika
    Satou, Akira
    But, Dmytro B.
    Popov, Vyacheslav V.
    Gorbenko, Ilya V.
    Kachorovskii, Valentin
    Otsuji, Taiichi
    [J]. PHYSICAL REVIEW X, 2020, 10 (03):
  • [4] Orbital magnetic ratchet effect
    Budkin, G. V.
    Golub, L. E.
    [J]. PHYSICAL REVIEW B, 2014, 90 (12):
  • [5] Asymmetric dual-grating gates graphene FET for detection of terahertz radiations
    Delgado-Notario, J. A.
    Clerico, V.
    Diez, E.
    Velazquez-Perez, J. E.
    Taniguchi, T.
    Watanabe, K.
    Otsuji, T.
    Meziani, Y. M.
    [J]. APL PHOTONICS, 2020, 5 (06)
  • [6] Drexler C, 2013, NAT NANOTECHNOL, V8, P104, DOI [10.1038/nnano.2012.231, 10.1038/NNANO.2012.231]
  • [7] Helicity sensitive terahertz radiation detection by field effect transistors
    Drexler, C.
    Dyakonova, N.
    Olbrich, P.
    Karch, J.
    Schafberger, M.
    Karpierz, K.
    Mityagin, Yu
    Lifshits, M. B.
    Teppe, F.
    Klimenko, O.
    Meziani, Y. M.
    Knap, W.
    Ganichev, S. D.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (12)
  • [8] Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
    Faltermeier, P.
    Olbrich, P.
    Probst, W.
    Schell, L.
    Watanabe, T.
    Boubanga-Tombet, S. A.
    Otsuji, T.
    Ganichev, S. D.
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (08)
  • [9] Enhanced plasmonic rectification of terahertz radiation in spatially periodic graphene structures towards the charge neutrality point
    Fateev, D. V.
    Mashinsky, K. V.
    Sun, J. D.
    Popov, V. V.
    [J]. SOLID-STATE ELECTRONICS, 2019, 157 : 20 - 24
  • [10] Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields
    Ganichev, SD
    [J]. PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 737 - 742