Charge transport through the multiple end zigzag edge states of armchair graphene nanoribbons and heterojunctions

被引:2
作者
Kuo, David M. T. [1 ]
机构
[1] Natl Cent Univ, Dept Elect Engn, Dept Phys, Chungli 32001, Taiwan
关键词
SILICON QUANTUM-DOT; TRANSISTORS;
D O I
10.1039/d4ra02574a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This comprehensive study investigates charge transport through the multiple end zigzag edge states of finite-size armchair graphene nanoribbons/boron nitride nanoribbons (n-AGNR/w-BNNR) junctions under a longitudinal electric field, where n and w denote the widths of the AGNRs and the BNNRs, respectively. In 13-atom wide AGNR segments, the edge states exhibit a blue Stark shift in response to the electric field, with only the long decay length zigzag edge states showing significant interaction with the red Stark shift subband states. Charge tunneling through such edge states assisted by the subband states is elucidated in the spectra of the transmission coefficient. In the 13-AGNR/6-BNNR heterojunction, notable influences on the energy levels of the end zigzag edge states of 13-AGNRs induced by BNNR segments are observed. We demonstrate the modulation of these energy levels in resonant tunneling situations, as depicted by bias-dependent transmission coefficient spectra. Intriguing nonthermal broadening of tunneling current shows a significant peak-to-valley ratio. Our findings highlight the promising potential of n-AGNR/w-BNNR heterojunctions with long decay length edge states in the realm of GNR-based single electron transistors at room temperature. This comprehensive study investigates charge transport through the multiple end zigzag edge states of finite-size armchair graphene nanoribbons/boron nitride nanoribbons junctions under a longitudinal electric field.
引用
收藏
页码:20113 / 20119
页数:7
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