Temperature Dependence of Self-Powered Photodetection Performance in Hybridε-Ga2O3/PEDOT:PSS Heterojunction

被引：2

作者：

Lu, Jia-Qi ^{[1
]}

Wang, Ji-Peng ^{[1
]}

Zhou, Chang ^{[1
]}

Yin, Shuo-Shuo ^{[1
]}

Ma, Wan-Yu ^{[1
]}

Li, Shan ^{[1
]}

Tang, Wei-Hua ^{[1
]}

机构：

[1] Nanjing Univ Posts & Telecommun NJUPT, Coll Integrated Circuit Sci & Engn, Innovat Ctr Gallium Oxide Semicond IC GAO, Nanjing 210023, Jiangsu, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Heterojunctions; Dark current; Temperature; Photonic band gap; Photoconductivity; Optical filters; Lighting; heterojunction; high temperature; photodetector (PD); self-powered; ULTRAVIOLET PHOTODETECTOR;

D O I：

10.1109/TED.2024.3436001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type beta-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 degrees C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 degrees C, the as-fabricated device had a low leakage current of 4.24 x 10(-11) A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 mu W/cm(2) light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 x 10(11) Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/beta-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.

引用

页码：5541 / 5545

页数：5

共 52 条

[1]

Balapure A., 2024, RSC APPL INTERFACES, V1, P43, DOI DOI 10.1039/D3LF00126A

[2] A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism [J].

Bosio, Alessio ;

Borelli, Carmine ;

Parisini, Antonella ;

Pavesi, Maura ;

Vantaggio, Salvatore ;

Fornari, Roberto .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (05)

[3] Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface [J].

Chen, X. H. ;

Chen, Y. T. ;

Ren, F-F ;

Cu, S. L. ;

Tan, H. H. ;

Jagadish, C. ;

Ye, J. D. .

APPLIED PHYSICS LETTERS, 2019, 115 (20)

[4] Aqueous-Printed Ga2O3 Films for High-Performance Flexible and Heat-Resistant Deep Ultraviolet Photodetector and Array [J].

Ding, Mengfan ;

Liang, Kun ;

Yu, Shunjie ;

Zhao, Xiaolong ;

Ren, Huihui ;

Zhu, Bowen ;

Hou, Xiaohu ;

Wang, Zhiwei ;

Tan, Pengju ;

Huang, Hong ;

Zhang, Zhongfang ;

Ma, Xiaolan ;

Xu, Guangwei ;

Long, Shibing .

ADVANCED OPTICAL MATERIALS, 2022, 10 (16)

[5] Performance-enhanced solar-blind photodetector based on a CH3NH3PbI3/β-Ga2O3 hybrid structure [J].

Dong, Linpeng ;

Pang, Tiqiang ;

Yu, Jiangang ;

Wang, Yucheng ;

Zhu, Wenguo ;

Zheng, Huadan ;

Yu, Jianhui ;

Jia, Renxu ;

Chen, Zhe .

JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (45) :14205-14211

[6] Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3 [J].

Dong, Linpeng ;

Jia, Renxu ;

Xin, Bin ;

Peng, Bo ;

Zhang, Yuming .

SCIENTIFIC REPORTS, 2017, 7

[7] Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity [J].

Du, Fengyu ;

Song, Qingwen ;

Tang, Xiaoyan ;

Zhang, Zeyulin ;

Yuan, Hao ;

Han, Chao ;

Zhang, Chunfu ;

Zhang, Yimen ;

Zhang, Yuming .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (11) :5662-5665

[8] Optical, electrical and photovoltaic characteristics of organic semiconductor based on oxazine/n-Si heterojunction [J].

Farag, A. A. M. ;

El-Shazly, E. A. A. ;

Rafea, M. Abdel ;

Ibrahim, A. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (10) :1853-1859

[9] Interface dipole and band bending in the hybrid p-n heterojunction MoS2/GaN(0001) [J].

Henck, Hugo ;

Ben Aziza, Zeineb ;

Zill, Olivia ;

Pierucci, Debora ;

Naylor, Carl H. ;

Silly, Mathieu G. ;

Gogneau, Noelle ;

Oehler, Fabrice ;

Collin, Stephane ;

Brault, Julien ;

Sirotti, Fausto ;

Bertran, Francois ;

Le Fevre, Patrick ;

Berciaud, Stephane ;

Johnson, A. T. Charlie ;

Lhuillier, Emmanuel ;

Rault, Julien E. ;

Ouerghi, Abdelkarim .

PHYSICAL REVIEW B, 2017, 96 (11)

[10] High-Temperature β-Ga2O3 Schottky Diodes and UVC Photodetectors Using RuOx Contacts [J].

Hou, Caixia ;

Gazoni, Rodrigo M. ;

Reeves, Roger J. ;

Allen, Martin W. .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (10) :1587-1590

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